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FGA6065ADF

FGA6065ADF

FGA6065ADF

ON Semiconductor

FGA6065ADF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA6065ADF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 306W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 306W
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 120A
Reverse Recovery Time 110 ns
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 60A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
IGBT Type Trench Field Stop
Gate Charge 84nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 25.6ns/71ns
Switching Energy 2.46mJ (on), 520μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.686047 $6.686047
10 $6.307591 $63.07591
100 $5.950558 $595.0558
500 $5.613734 $2806.867
1000 $5.295975 $5295.975
FGA6065ADF Product Details

FGA6065ADF Description


Field Stop Trench third generation IGBT, which has exceptionally low Rds(on) and substantially faster switching characteristics for exceptional efficiency, was used in this ADF IGBT series. Furthermore, this type of technology is fully tuned for a range of PFC (Power Factor Correction) topologies, including Single boost, Multi channel interleaved, etc., with switching performance of over 20KHz. Super Low Thermal Resistance for Wider SOA for System Stability is provided by TO3P package.



FGA6065ADF Features


  • Maximum Junction Temperature : TJ = 175 °C

  • Positive Temperaure Co-efficient for Easy Parallel Operating

  • High Current Capability

  • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A

  • 100% of the Parts Tested for ILM (1)

  • High Input Impedance

  • Fast Switching

  • RoHS Compliant



FGA6065ADF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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