FGAF40N60SMD

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Manufacturer part number:FGAF40N60SMD

Manufacturer:ON Semiconductor

Description:FGAF40N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGAF40N60SMD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Weight	6.962g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	115W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	115W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	36 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	37 ns
Test Condition	400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 40A
Turn Off Time-Nom (toff)	132 ns
IGBT Type	Field Stop
Gate Charge	119nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	12ns/92ns
Switching Energy	870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	17ns
Height	26.7mm
Length	15.7mm
Width	3.2mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free