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FGD4536TM

FGD4536TM

FGD4536TM

ON Semiconductor

Trans IGBT Chip N-CH 360V 3-Pin(2+Tab) TO-252 T/R

SOT-23

FGD4536TM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.36202mg
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 125W
Base Part Number FGD4536
Element Configuration Single
Input Type Standard
Power - Max 125W
Collector Emitter Voltage (VCEO) 360V
Max Collector Current 220A
Collector Emitter Breakdown Voltage 360V
Collector Emitter Saturation Voltage 1.59V
Max Breakdown Voltage 360V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
IGBT Type Trench
Gate Charge 47nC
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
FGD4536TM Product Details
The ONSEMI FGD4536TM is a single N-channel insulated gate bipolar transistor (IGBT) chip with a maximum voltage rating of 360V. This chip is designed for use in a variety of applications, including motor control, power conversion, and switching. It features a 3-pin (2+Tab) TO-252 package, and is capable of handling high power levels with low losses. The FGD4536TM is designed to provide superior performance and reliability, making it an ideal choice for a wide range of applications. It is also RoHS compliant, making it an environmentally friendly choice. With its high power handling capabilities and low losses, the FGD4536TM is an excellent choice for a variety of applications.

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