FGH25N120FTDS

new-10%

Manufacturer part number:FGH25N120FTDS

Manufacturer:ON Semiconductor

Description:IGBT 1200V 50A 313W TO247

Case Package:SOT-23

Datasheet:FGH25N120FTDS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	313W
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	313W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Reverse Recovery Time	535 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	63 ns
Test Condition	600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 25A
Turn Off Time-Nom (toff)	299 ns
IGBT Type	Trench Field Stop
Gate Charge	169nC
Current - Collector Pulsed (Icm)	75A
Td (on/off) @ 25°C	26ns/151ns
Switching Energy	1.42mJ (on), 1.16mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant