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FJN3302RTA

  • FJN3302RTA - FJN3302RTA datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
  • FJN3302RTA - FJN3302RTA datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

FJN3302RTA

FJN3302RTA

ON Semiconductor

FJN3302RTA datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

FJN3302RTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
PackagingTape & Box (TB)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code8541.21.00.95
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation300mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FJN3302
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation300mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage300mV
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 10V
hFE Min 30
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
Height 780μm
Length 1.7mm
Width 980μm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1893 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.035251$0.035251
500$0.025920$12.96
1000$0.021600$21.6
2000$0.019817$39.634
5000$0.018520$92.6
10000$0.017228$172.28
15000$0.016662$249.93
50000$0.016383$819.15

FJN3302RTA Product Details

FJN3302RTA Description


The ON Semiconductor FJN3302RTA is an NPN Epitaxial Silicon Transistor with Bias Resistor.



FJN3302RTA Features


  • 100 mA Output Current Capability

  • Built-in Bias Resistor (R1=10KΩ, R2=10KΩ)



FJN3302RTA Applications


  • General usage and suitable for many different applications


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