FJN4301RTA

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FJN4301RTA

Manufacturer part number:FJN4301RTA

Manufacturer:ON Semiconductor

Description:FJN4301RTA datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FJN4301RTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins	3
Weight	240mg
Packaging	Tape & Box (TB)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code	8541.21.00.95
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	300mW
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	FJN4301
Qualification Status	Not Qualified
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Power Dissipation	300mW
Transistor Application	SWITCHING
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	200MHz
Collector Emitter Saturation Voltage	-300mV
Max Breakdown Voltage	50V
Frequency - Transition	200MHz
Collector Base Voltage (VCBO)	-50V
Emitter Base Voltage (VEBO)	-10V
hFE Min	20
Resistor - Base (R1)	4.7 k Ω
Continuous Collector Current	-100mA
Resistor - Emitter Base (R2)	4.7 k Ω
Height	5.33mm
Length	5.2mm
Width	4.19mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free