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FJN4305RBU

FJN4305RBU

FJN4305RBU

ON Semiconductor

FJN4305RBU datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

FJN4305RBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 2.13
HTS Code 8541.21.00.75
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Base Part Number FJN4305
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant

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