FJP2145TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJP2145TU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~125°C TJ
Packaging
Tube
Published
2013
Series
ESBC™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
120W
Number of Elements
1
Element Configuration
Single
Power Dissipation
120W
Transistor Application
SWITCHING
Gain Bandwidth Product
15MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
800V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 200mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 300mA, 1.5A
Collector Emitter Breakdown Voltage
800V
Gate to Source Voltage (Vgs)
20V
Transition Frequency
28.4MHz
Collector Emitter Saturation Voltage
151mV
Collector Base Voltage (VCBO)
1.1kV
Emitter Base Voltage (VEBO)
7V
hFE Min
20
Height
16.51mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.783681
$1.783681
10
$1.682718
$16.82718
100
$1.587469
$158.7469
500
$1.497614
$748.807
1000
$1.412842
$1412.842
FJP2145TU Product Details
FJP2145TU Overview
This device has a DC current gain of 20 @ 200mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 151mV, it offers maximum design flexibility.A VCE saturation (Max) of 2V @ 300mA, 1.5A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 7V for high efficiency.There is a transition frequency of 28.4MHz in the part.A maximum collector current of 5A volts is possible.
FJP2145TU Features
the DC current gain for this device is 20 @ 200mA 5V a collector emitter saturation voltage of 151mV the vce saturation(Max) is 2V @ 300mA, 1.5A the emitter base voltage is kept at 7V a transition frequency of 28.4MHz
FJP2145TU Applications
There are a lot of ON Semiconductor FJP2145TU applications of single BJT transistors.