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FJV3109RMTF

FJV3109RMTF

FJV3109RMTF

ON Semiconductor

FJV3109RMTF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

FJV3109RMTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Packaging Tape & Reel (TR)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Current Rating 100mA
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Power - Max 200mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Resistor - Base (R1) 4.7 kOhms
Continuous Collector Current 100mA
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.054291 $0.054291
500 $0.039920 $19.96
1000 $0.033266 $33.266
2000 $0.030520 $61.04
5000 $0.028523 $142.615
10000 $0.026533 $265.33
15000 $0.025660 $384.9
50000 $0.025232 $1261.6
FJV3109RMTF Product Details

FJV3109RMTF Description


The ON Semiconductor FJV3109RMTF is an NPN Epitaxial Silicon Transistor with Bias Resistor



FJV3109RMTF Features


  • Built-in bias Resistor (R=4.7KΩ)

  • Complement to FJV4109R



FJV3109RMTF Applications


  • Switching circuit, Inverter, Interface circuit, Driver Circuit


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