FJX3014RTF

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FJX3014RTF

Manufacturer part number:FJX3014RTF

Manufacturer:ON Semiconductor

Description:FJX3014RTF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FJX3014RTF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	LIFETIME (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	30mg
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 10
HTS Code	8541.21.00.95
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	100mA
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	FJX3014
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200mW
Transistor Application	SWITCHING
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Collector Emitter Saturation Voltage	300mV
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	10V
hFE Min	68
Resistor - Base (R1)	4.7 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47 k Ω
Height	1mm
Length	2mm
Width	1.25mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free