FMG2G150US60 datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website
SOT-23
FMG2G150US60 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
7PM-HA
Supplier Device Package
7PM-HA
Operating Temperature
-40°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Half Bridge
Power - Max
595W
Input
Standard
Current - Collector Cutoff (Max)
250μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
150A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 150A
NTC Thermistor
No
FMG2G150US60 Product Details
FMG2G150US60 Description
FMG2G150US60 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FMG2G150US60 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.