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FMG2G150US60

FMG2G150US60

FMG2G150US60

ON Semiconductor

FMG2G150US60 datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

SOT-23

FMG2G150US60 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case 7PM-HA
Supplier Device Package 7PM-HA
Operating Temperature -40°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 595W
Input Standard
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 150A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 150A
NTC Thermistor No
FMG2G150US60 Product Details

FMG2G150US60 Description

 

FMG2G150US60 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FMG2G150US60 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FMG2G150US60 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FMG2G150US60 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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