FMG2G150US60E datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website
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FMG2G150US60E Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Supplier Device Package
7PM-GA
Operating Temperature
-40°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Half Bridge
Power - Max
500W
Input
Standard
Current - Collector Cutoff (Max)
250μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
150A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 150A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
12.84nF @ 30V
FMG2G150US60E Product Details
FMG2G150US60E Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.