FOD814A300 datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from ON Semiconductor stock available on our website
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FOD814A300 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
4-DIP (0.300, 7.62mm)
Number of Pins
4
Weight
408mg
Operating Temperature
-55°C~105°C
Packaging
Tube
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
UL APPROVED, VDE APPROVED
Max Power Dissipation
200mW
Voltage - Isolation
5000Vrms
Output Voltage
70V
Output Type
Transistor
Number of Elements
1
Configuration
SINGLE
Power Dissipation
200mW
Voltage - Forward (Vf) (Typ)
1.2V
Input Type
AC, DC
Forward Current
50mA
Max Output Voltage
70V
Output Current per Channel
50mA
Rise Time
18μs
Fall Time (Typ)
18 μs
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
50mA
Rise / Fall Time (Typ)
4μs 3μs
Max Input Current
50mA
Collector Emitter Saturation Voltage
200mV
Current Transfer Ratio (Min)
50% @ 1mA
Input Current
50mA
Current Transfer Ratio (Max)
150% @ 1mA
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.57000
$0.57
10
$0.44800
$4.48
100
$0.32160
$32.16
500
$0.24690
$123.45
1,000
$0.19063
$0.19063
FOD814A300 Product Details
FOD814A300 Description
The FOD814A300 is a 4-pin dual in-line package that houses two gallium arsenide infrared emitting diodes that are coupled in inverse parallel and drive a silicon phototransistor output. A silicon phototransistor is driven by a gallium arsenide infrared emitting diode in the FOD817 Series, which has a 4-pin dual inline package.