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FQA10N80C

  • FQA10N80C
  • FQA10N80C

FQA10N80C

FQA10N80C

ON Semiconductor

FQA10N80C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQA10N80C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 240W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 10A
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 920 mJ
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.38000 $1.38
500 $1.3662 $683.1
1000 $1.3524 $1352.4
1500 $1.3386 $2007.9
2000 $1.3248 $2649.6
2500 $1.311 $3277.5
FQA10N80C Product Details

FQA10N80C Description


The planar stripe and DMOS technologies developed by ON Semiconductor are used to create the FQA10N80C N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. The FQA10N80C datasheet states that it can be used for active power factor correction (PFC), switching mode power supply, and electronic light ballasts.



FQA10N80C Features


  • RoHS compliant

  • Low Crss (Typ. 15 pF)

  • 100% Avalanche Tested

  • Low Gate Charge (Typ. 44 nC)

  • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A



FQA10N80C Applications


  • Switching

  • High efficiency switch mode power supplies.


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