Description

The FQA24N50F is a 500V N-Channel MOSFET. The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild.

In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices work well in basic full-bridge topologies, phase-shift ZVS, and high-efficiency switch mode power supplies that utilize the body diode.

Features

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode ( max, 250ns )

• 24A, 500V, RDS(on) = 0.2? @VGS = 10 V

• Low gate charge ( typical 90 nC)

• Low Crss ( typical 55 pF)

Applications

• In radio frequency applications

• Resistor

• Capacitor

• Inductor

• DC motors

• In designing chopper circuits