FQA6N80_F109

new-10%

Manufacturer part number:FQA6N80_F109

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 6.3A TO-3P

Case Package:SOT-23

Datasheet:FQA6N80_F109 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	185W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.95Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.3A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V