FQA85N06

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Manufacturer part number:FQA85N06

Manufacturer:ON Semiconductor

Description:FQA85N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQA85N06 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	100A
Number of Elements	1
Power Dissipation-Max	214W Tc
Element Configuration	Single
Power Dissipation	214W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	112nC @ 10V
Rise Time	230ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	175 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Input Capacitance	4.12nF
Drain to Source Resistance	10mOhm
Rds On Max	10 mΩ
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free