FQA8N80C_F109

new-10%

Manufacturer part number:FQA8N80C_F109

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 8.4A TO-3P

Case Package:SOT-23

Datasheet:FQA8N80C_F109 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	220W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.55Ohm @ 4.2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.4A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V