FQA9N90C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQA9N90C Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
QFET®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
280W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.4 Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2730pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9A Tc
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Drain to Source Voltage (Vdss)
900V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Drain Current-Max (Abs) (ID)
9A
Pulsed Drain Current-Max (IDM)
36A
DS Breakdown Voltage-Min
900V
Avalanche Energy Rating (Eas)
900 mJ
FQA9N90C Product Details
FQA9N90C Description
Planar stripe and DMOS technology were used to create the N-channel QFET? enhancement-mode power MOSFET known as the FQA9N90C. This cutting-edge MOSFET technology has been specifically adapted to lower ON-state resistance, provide improved switching performance, and have a high avalanche energy strength. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with this device.