FQB10N20LTM

new-10%

Manufacturer part number:FQB10N20LTM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 10A D2PAK

Case Package:SOT-23

Datasheet:FQB10N20LTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	10A
Power Dissipation-Max	3.13W Ta 87W Tc
Element Configuration	Single
Power Dissipation	3.13W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 5V
Rise Time	150ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	95 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	830pF
Drain to Source Resistance	360mOhm
Rds On Max	360 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free