FQB25N33TM

new-10%

Manufacturer part number:FQB25N33TM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 330V 25A D2PAK

Case Package:SOT-23

Datasheet:FQB25N33TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	QFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Voltage - Rated DC	330V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	25A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.1W Ta 250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2010pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 15V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	330V
Pulsed Drain Current-Max (IDM)	100A
Avalanche Energy Rating (Eas)	370 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free