FQD3P50TM-F085 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQD3P50TM-F085 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 50W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.9 Ω @ 1.05A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.1A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Pulsed Drain Current-Max (IDM)
8.4A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
250 mJ
RoHS Status
ROHS3 Compliant
FQD3P50TM-F085 Product Details
FQD3P50TM-F085 Description
The P-Channel enhancement mode power field effect transistor FQD3P50TM-F085 is produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQD3P50TM-F085 is well suited for electronic lamp ballast based on the complimentary half bridge.