FQD4N50TM_WS

new-10%

Manufacturer part number:FQD4N50TM_WS

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 2.6A DPAK

Case Package:SOT-23

Datasheet:FQD4N50TM_WS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.5W Ta 45W Tc
Element Configuration	Single
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.6A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
RoHS Status	RoHS Compliant