FQI6N40CTU

new-10%

Manufacturer part number:FQI6N40CTU

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) I2PAK Rail

Case Package:SOT-23

Datasheet:FQI6N40CTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	400V
Technology	MOSFET (Metal Oxide)
Current Rating	6A
Power Dissipation-Max	73W Tc
Element Configuration	Single
Power Dissipation	73W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	625pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	65ns
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	400V
Input Capacitance	625pF
Drain to Source Resistance	830mOhm
Rds On Max	1 Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free