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FQP70N08

  • FQP70N08
  • FQP70N08

FQP70N08

FQP70N08

ON Semiconductor

FQP70N08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP70N08 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 155W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.12000 $1.12
500 $1.1088 $554.4
1000 $1.0976 $1097.6
1500 $1.0864 $1629.6
2000 $1.0752 $2150.4
2500 $1.064 $2660
FQP70N08 Product Details

FQP70N08 Description


The FQP70N08 N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. 



FQP70N08 Features


  • 57A, 100V, RDS(on) = 23mΩ(Max.) @VGS = 10 V, ID = 28.5A

  • Low gate charge ( Typ. 85nC)

  • Low Crss ( Typ. 150pF)

  • 100% avalanche tested

  • 175°C maximum junction temperature rating



FQP70N08 Applications


  • Other Audio & Video

 


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