FQPF13N50C     Description

  These N-channel enhanced power field effect transistors are produced using on Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.

FQPF13N50C        Features

13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A

Low Gate Charge (Typ. 43 nC)

Low Crss (Typ. 20 pF)

100% Avalanche Tested

FQPF13N50C        Applications

efficient switching mode power supplies

active power factor correction

electronic lamp ballasts based on half-bridge topology