FQPF50N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQPF50N06 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2001
Series
QFET®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
22mOhm
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
31A
Number of Elements
1
Power Dissipation-Max
47W Tc
Element Configuration
Single
Power Dissipation
47W
Turn On Delay Time
15 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
22m Ω @ 15.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1540pF @ 25V
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Rise Time
105ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
65 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
31A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Nominal Vgs
4 V
Height
9.19mm
Length
10.16mm
Width
4.7mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FQPF50N06 Product Details
FQPF50N06 Description
The planar stripe, DMOS technology developed by Fairchild is used to create these N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for low voltage uses including automotive, DC/DC converters, and high efficiency switching for power management in mobile and battery-powered products.