FQPF5N50C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQPF5N50C Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Series
QFET®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
5A
Number of Elements
1
Power Dissipation-Max
38W Tc
Element Configuration
Single
Power Dissipation
38W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.4 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
625pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Rise Time
46ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Height
9.19mm
Length
10.16mm
Width
4.7mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FQPF5N50C Product Details
FQPF5N50C Description
FQPF5N50C is a type of N-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, active power factor correction, and electronic lamp ballasts.