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FQPF5N50C

FQPF5N50C

FQPF5N50C

ON Semiconductor

FQPF5N50C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF5N50C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series QFET®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 5A
Number of Elements 1
Power Dissipation-Max 38W Tc
Element Configuration Single
Power Dissipation 38W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Height 9.19mm
Length 10.16mm
Width 4.7mm
RoHS Status RoHS Compliant
Lead Free Lead Free
FQPF5N50C Product Details

FQPF5N50C Description


FQPF5N50C is a type of N-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology.  It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, active power factor correction, and electronic lamp ballasts.



FQPF5N50C Features


  • Low gate charge

  • Low on-state resistance

  • Superior switching performance

  • High avalanche energy strength

  • Available in the TO-220 package



FQPF5N50C Applications


  • Switched-mode power supplies

  • Active power factor correction

  • Electronic lamp ballasts


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