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H11A817B300

H11A817B300

H11A817B300

ON Semiconductor

H11A817B300 datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from ON Semiconductor stock available on our website

SOT-23

H11A817B300 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP
Operating Temperature -55°C~100°C
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Voltage - Isolation 5300Vrms
Output Voltage 70V
Output Type Transistor
Number of Elements 1
Number of Channels 1
Number of Circuits 1
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Forward Current 50mA
Output Current per Channel 50mA
Rise Time 18μs
Forward Voltage 1.5V
Fall Time (Typ) 18 μs
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 50mA
Rise / Fall Time (Typ) 2.4μs 2.4μs
Current - Output / Channel 50mA
Reverse Breakdown Voltage 6V
Voltage - Output (Max) 70V
Collector Emitter Saturation Voltage 200mV
Current - DC Forward (If) (Max) 50mA
Current Transfer Ratio (Min) 130% @ 5mA
Current Transfer Ratio (Max) 260% @ 5mA
Vce Saturation (Max) 200mV
RoHS Status RoHS Compliant
Lead Free Lead Free

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