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H11A817BW

H11A817BW

H11A817BW

ON Semiconductor

H11A817BW datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from ON Semiconductor stock available on our website

SOT-23

H11A817BW Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.400, 10.16mm)
Number of Pins 4
Supplier Device Package 4-DIP
Operating Temperature -55°C~100°C
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Voltage - Isolation 5300Vrms
Output Voltage 70V
Output Type Transistor
Number of Channels 1
Number of Circuits 1
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Output Current per Channel 50mA
Rise Time 2.4μs
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 50mA
Rise / Fall Time (Typ) 2.4μs 2.4μs
Current - Output / Channel 50mA
Voltage - Output (Max) 70V
Collector Emitter Saturation Voltage 200mV
Current - DC Forward (If) (Max) 50mA
Current Transfer Ratio (Min) 130% @ 5mA
Current Transfer Ratio (Max) 260% @ 5mA
Vce Saturation (Max) 200mV
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.06000 $0.06
500 $0.0594 $29.7
1000 $0.0588 $58.8
1500 $0.0582 $87.3
2000 $0.0576 $115.2
2500 $0.057 $142.5

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