HUF75332P3

new-10%

Manufacturer part number:HUF75332P3

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 19m Ω @ 60A, 10V ±20V 1300pF @ 25V 85nC @ 20V TO-220-3

Case Package:SOT-23

Datasheet:HUF75332P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	UltraFET™
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	60A
Number of Elements	1
Power Dissipation-Max	145W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	145W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 20V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	60A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free