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HUF75617D3S

HUF75617D3S

HUF75617D3S

ON Semiconductor

MOSFET N-CH 100V 16A DPAK

SOT-23

HUF75617D3S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 64W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 20V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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