HUF76609D3

new-10%

Manufacturer part number:HUF76609D3

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 10A TO-251AA

Case Package:SOT-23

Datasheet:HUF76609D3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	UltraFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	10A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	49W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	49W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	41ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	10A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	100V
RoHS Status	RoHS Compliant
Lead Free	Lead Free