HUFA76419D3ST

new-10%

Manufacturer part number:HUFA76419D3ST

Manufacturer:ON Semiconductor

Description:Transistor, Mosfet, N-Channel, 60V V(Br)Dss, 20A I(D), To-252Aa Rohs Compliant: Yes

Case Package:SOT-23

Datasheet:HUFA76419D3ST Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	UltraFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	20A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
Turn On Delay Time	6.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	37m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	27.5nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free