IMD10AMT1G

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IMD10AMT1G

Manufacturer part number:IMD10AMT1G

Manufacturer:ON Semiconductor

Description:IMD10AMT1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IMD10AMT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
HTS Code	8541.21.00.95
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	285mW
Terminal Form	GULL WING
Pin Count	6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	285mW
Halogen Free	Halogen Free
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA 5V / 68 @ 100mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	50V
hFE Min	68
Resistor - Base (R1)	13k Ω, 130 Ω
Continuous Collector Current	500mA
Resistor - Emitter Base (R2)	10k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free