IRLW610ATM

new-10%

Manufacturer part number:IRLW610ATM

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:IRLW610ATM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.1W Ta 33W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.3A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V