J112 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
J112 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
200.998119mg
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
35V
Max Power Dissipation
625mW
Current Rating
50mA
Base Part Number
J112
Voltage
35V
Element Configuration
Single
Current
5A
Power Dissipation
350mW
Power - Max
625mW
FET Type
N-Channel
Breakdown Voltage
-35V
Drain to Source Voltage (Vdss)
35V
Continuous Drain Current (ID)
5mA
Gate to Source Voltage (Vgs)
-35V
Drain to Source Resistance
50Ohm
Current - Drain (Idss) @ Vds (Vgs=0)
5mA @ 15V
Voltage - Cutoff (VGS off) @ Id
1V @ 1μA
Voltage - Breakdown (V(BR)GSS)
35V
Resistance - RDS(On)
50Ohms
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.57000
$0.57
10
$0.40400
$4.04
100
$0.26670
$26.67
500
$0.15958
$79.79
1,000
$0.12389
$0.12389
J112 Product Details
J112 Description : J112 is a J11x series high-performance N channel silicon FET or field effect transistor. Other transistors in this family include the JS111 and 112, which have similar functions but different specifications to meet specific needs. However, sample and hold applications, choppers, analog switching applications, commentators, current limiting, and other applications are the principal applications for these transistors. There are also some advantages to using these transistors for specific applications, such as their suitability for high-speed switching, better frequency response, good accuracy, low insertion loss, and symmetrical feature, which allows the source and drain to be swapped. Aside from these advantages, they are also very inexpensive. The transistor's maximum gate to source voltage is -35, maximum power dissipation is 625mW, and maximum continuous gate current is 50mA, according to its specifications. The TO-92 package and the tiny SOT-23 package are both available for these transistors.
J112 Features : Package Type: TO-92, SOT-23 Transistor Type: N Channel JFET (Symmetrical) Maximum Drain to Gate Voltage: 35V Maximum Reverse Gate to Source Voltage: –35V Maximum Continues Gate Current: 50mA Maximum Gate to Source Cutoff Voltage : –5 to –3V Maximum Power Dissipation: 625mW Max Storage & Operating temperature Should Be: -55 to +150 °C Drain and source are exchangeable.
J112 Applications : Audio preamplifiers applications High gain amplifiers circuits Low level signal amplification applications Sensor & detector applications Current limiting circuits Analog switching applications