J112-D74Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
J112-D74Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
48 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2006
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
J112
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Power - Max
625mW
FET Type
N-Channel
Transistor Application
SWITCHING
Drain-source On Resistance-Max
50Ohm
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.4W
Feedback Cap-Max (Crss)
5 pF
Current - Drain (Idss) @ Vds (Vgs=0)
5mA @ 15V
Voltage - Cutoff (VGS off) @ Id
1V @ 1μA
Voltage - Breakdown (V(BR)GSS)
35V
Resistance - RDS(On)
50Ohm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.10247
$0.20494
6,000
$0.09702
$0.58212
10,000
$0.08885
$0.8885
50,000
$0.07524
$3.762
100,000
$0.07415
$7.415
J112-D74Z Product Details
The J112-D74Z is a N-Channel Junction Field Effect Transistor (JFET) manufactured by ON Semiconductor. It is a low-power device with a maximum drain-source voltage of 35V and a maximum drain current of 625mW. It is housed in a TO-92 package, which is a small, three-pin plastic package that is commonly used for low-power transistors.
Features of the J112-D74Z include low noise, low input capacitance, and low input bias current. It also has a high input impedance and a low gate-source leakage current. The device is suitable for use in a variety of applications, including audio amplifiers, signal switching, and voltage regulation. It can also be used in low-power analog circuits, such as preamplifiers and signal conditioning circuits.