J310G datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available on our website
SOT-23
J310G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Number of Pins
3
Weight
453.59237mg
Packaging
Bulk
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
350mW
Terminal Position
BOTTOM
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
260
Current Rating
60mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
J310
Pin Count
3
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
350mW
Current - Test
10mA
Transistor Application
AMPLIFIER
Breakdown Voltage
-25V
Drain to Source Voltage (Vdss)
25V
Transistor Type
N-Channel JFET
Gate to Source Voltage (Vgs)
25V
Gain
16dB
FET Technology
JUNCTION
Voltage - Test
10V
Feedback Cap-Max (Crss)
2.5 pF
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.369474
$0.369474
10
$0.348560
$3.4856
100
$0.328830
$32.883
500
$0.310217
$155.1085
1000
$0.292658
$292.658
J310G Product Details
J310G Description
This N-Channel MOSFET is created using the cutting-edge PowerTrench? technology from Fairchild Semiconductor, which was created to reduce the on-state resistance while maintaining good switching performance. These devices are made to give a high level of dv/dt capabilities for the most demanding applications in addition to a significant reduction in on-resistance. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.