KSA473OTSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA473OTSTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA473
Power - Max
10W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
100MHz
KSA473OTSTU Product Details
KSA473OTSTU Overview
In this device, the DC current gain is 70 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This product comes in a TO-220-3 device package from the supplier.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
KSA473OTSTU Features
the DC current gain for this device is 70 @ 500mA 2V the vce saturation(Max) is 800mV @ 200mA, 2A the supplier device package of TO-220-3
KSA473OTSTU Applications
There are a lot of ON Semiconductor KSA473OTSTU applications of single BJT transistors.