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KSA473OTU

KSA473OTU

KSA473OTU

ON Semiconductor

KSA473OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA473OTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Base Part Number KSA473
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 10W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS Status RoHS Compliant
KSA473OTU Product Details

KSA473OTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 500mA 2V.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 100MHz.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

KSA473OTU Features


the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 800mV @ 200mA, 2A
a transition frequency of 100MHz

KSA473OTU Applications


There are a lot of ON Semiconductor KSA473OTU applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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