KSB601Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB601Y Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSB601
Power - Max
1.5W
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 3A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
5A
KSB601Y Product Details
KSB601Y Overview
In this device, the DC current gain is 5000 @ 3A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 3mA, 3A.Supplier package TO-220-3 contains the product.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
KSB601Y Features
the DC current gain for this device is 5000 @ 3A 2V the vce saturation(Max) is 1.5V @ 3mA, 3A the supplier device package of TO-220-3
KSB601Y Applications
There are a lot of ON Semiconductor KSB601Y applications of single BJT transistors.