Welcome to Hotenda.com Online Store!

logo
userjoin
Home

KSB601Y

KSB601Y

KSB601Y

ON Semiconductor

KSB601Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB601Y Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSB601
Power - Max 1.5W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 3A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 5A
KSB601Y Product Details

KSB601Y Overview


In this device, the DC current gain is 5000 @ 3A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 3mA, 3A.Supplier package TO-220-3 contains the product.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.

KSB601Y Features


the DC current gain for this device is 5000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the supplier device package of TO-220-3

KSB601Y Applications


There are a lot of ON Semiconductor KSB601Y applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

Related Part Number

BF423ZL1
BF423ZL1
$0 $/piece
FPN560A_D26Z
MPS6725RLRP
MPS6725RLRP
$0 $/piece
KSB811YBU
KSB811YBU
$0 $/piece
PBSS5540Z/ZLF
BD649-S
BD649-S
$0 $/piece
BC546BBU
BC546BBU
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News