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KSC2334RTU

KSC2334RTU

KSC2334RTU

ON Semiconductor

KSC2334RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2334RTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2334
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 7A
KSC2334RTU Product Details

KSC2334RTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 3A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 500mA, 5A.The product comes in the supplier device package of TO-220-3.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSC2334RTU Features


the DC current gain for this device is 40 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A
the supplier device package of TO-220-3

KSC2334RTU Applications


There are a lot of ON Semiconductor KSC2334RTU applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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