KSC838YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC838YBU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Max Power Dissipation
250mW
Current Rating
30mA
Frequency
250MHz
Base Part Number
KSC838
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
250mW
Power - Max
250mW
Gain Bandwidth Product
250MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 12V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
30mA
Max Frequency
250MHz
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
4V
hFE Min
120
Continuous Collector Current
30mA
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.053626
$0.053626
10
$0.050590
$0.5059
100
$0.047727
$4.7727
500
$0.045025
$22.5125
1000
$0.042477
$42.477
KSC838YBU Product Details
KSC838YBU Overview
This device has a DC current gain of 120 @ 2mA 12V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 1mA, 10mA.Continuous collector voltage should be kept at 30mA for high efficiency.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 30mA current rating.This product comes in a TO-92-3 device package from the supplier.The device exhibits a collector-emitter breakdown at 30V.In extreme cases, the collector current can be as low as 30mA volts.
KSC838YBU Features
the DC current gain for this device is 120 @ 2mA 12V the vce saturation(Max) is 400mV @ 1mA, 10mA the emitter base voltage is kept at 4V the current rating of this device is 30mA the supplier device package of TO-92-3
KSC838YBU Applications
There are a lot of ON Semiconductor KSC838YBU applications of single BJT transistors.