KSD1691YSTSTU Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 2A 1V.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 7V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Product package TO-126-3 comes from the supplier.The device exhibits a collector-emitter breakdown at 60V.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

KSD1691YSTSTU Features

the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
the supplier device package of TO-126-3

KSD1691YSTSTU Applications

There are a lot of ON Semiconductor KSD1691YSTSTU applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver