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KSD560OTU

  • KSD560OTU
  • KSD560OTU

KSD560OTU

KSD560OTU

ON Semiconductor

KSD560OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD560OTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.95
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Base Part Number KSD560
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE
Power - Max 1.5W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 3000 @ 3A 2V
Current - Collector Cutoff (Max) 1μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 5A
RoHS Status RoHS Compliant
KSD560OTU Product Details

KSD560OTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 3000 @ 3A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 3mA, 3A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSD560OTU Features


the DC current gain for this device is 3000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A

KSD560OTU Applications


There are a lot of ON Semiconductor KSD560OTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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