KSK30RBU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
KSK30RBU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
125°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSK30
Power - Max
100mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
8.2pF @ 0V
Current - Drain (Idss) @ Vds (Vgs=0)
300μA @ 10V
Voltage - Cutoff (VGS off) @ Id
400mV @ 100nA
Voltage - Breakdown (V(BR)GSS)
50V
KSK30RBU Product Details
KSK30RBU Description
A junction field effect transistor (JFET) is the the simplest type of three-terminal semiconductor transistor. JFETs are widely employed as electronically controlled switches, voltage-controlled resistors and amplifiers.
KSK30RBU Features
Low Noise PRE-AMP. Use
? High Input Impedance: IGSS=1nA (MAX)
? Low Noise: NF=0.5dB (TYP)
? High Voltage: VGDS= -50V
KSK30RBU Applications
Memory Termination Requlator for DDRDDR2
DDR3.DDR3Land DDR4 VTT Termination
Low-Voltage Applications for 1-V to 6-VInput Rails