MBR20L80CTG datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
MBR20L80CTG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2009
Series
SWITCHMODE™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-20°C
Additional Feature
LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
500μA @ 80V
Voltage - Forward (Vf) (Max) @ If
670mV @ 10A
Max Reverse Leakage Current
500μA
Operating Temperature - Junction
-20°C~150°C
Max Surge Current
175A
Application
EFFICIENCY
Forward Voltage
850mV
Max Reverse Voltage (DC)
80V
Average Rectified Current
10A
Number of Phases
1
JEDEC-95 Code
TO-220AB
Peak Non-Repetitive Surge Current
175A
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MBR20L80CTG Product Details
MBR20L80CTG Overview
In this case, the forward voltage has to be set at 850mV to operate the device.Array should be a rule to monArrayor the surge current and not allow Array to exceed 175A.This semiconductor device's maximal reverse leakage current is 500μA kA, which is its reverse leakage current when reverse biased.
MBR20L80CTG Features
850mV forward voltage
MBR20L80CTG Applications
There are a lot of ON Semiconductor MBR20L80CTG applications of rectifier diode array.