MBR2H200SFT1G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available on our website
SOT-23
MBR2H200SFT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOD-123F
Number of Pins
2
Weight
10.290877mg
Packaging
Tape & Reel (TR)
Published
2014
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
200μA @ 200V
Voltage - Forward (Vf) (Max) @ If
940mV @ 2A
Forward Current
2A
Operating Temperature - Junction
-55°C~150°C
Forward Voltage
940mV
Max Reverse Voltage (DC)
200V
Average Rectified Current
2A
Peak Reverse Current
200μA
Max Repetitive Reverse Voltage (Vrrm)
200V
Reverse Voltage
200V
Max Forward Surge Current (Ifsm)
30A
Max Junction Temperature (Tj)
150°C
Height
980μm
Length
2.9mm
Width
1.8mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MBR2H200SFT1G Product Details
MBR2H200SFT1G Overview
An acceptable reverse voltage would be 200V.For this device, the average rectified current is 2A volts.A value of 2A is the maximum forward current that can be allowed.In the datasheets, the peak reverse is 200μA, as indicated by the data chart.
MBR2H200SFT1G Features
an average rectified current of 2A volts the peak reverse is 200μA
MBR2H200SFT1G Applications
There are a lot of ON Semiconductor MBR2H200SFT1G applications of single-phase diode rectifier.