MBR60H100CT datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
MBR60H100CT Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Diode Element Material
SILICON
Packaging
Tube
Published
2009
Series
SWITCHMODE™
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Voltage - Rated DC
100V
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
60A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
10μA @ 100V
Voltage - Forward (Vf) (Max) @ If
840mV @ 30A
Max Reverse Leakage Current
100μA
Operating Temperature - Junction
175°C Max
Max Surge Current
350A
Application
EFFICIENCY
Max Reverse Voltage (DC)
100V
Average Rectified Current
30A
Number of Phases
1
JEDEC-95 Code
TO-220AB
Diode Configuration
1 Pair Common Cathode
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MBR60H100CT Product Details
MBR60H100CT Overview
A surge current should be monitored and should not exceed 350A.From the part, a current of 60A can be drawn.As a reverse biased semiconductor device, its maximal reverse leakage current is 100μA.
MBR60H100CT Features
MBR60H100CT Applications
There are a lot of ON Semiconductor MBR60H100CT applications of rectifier diode array.